Semiconductor EquationsSpringer-Verlag, 1990 - 248 من الصفحات |
المحتوى
Kinetic Transport Models for Semiconductors | 3 |
The Initial Value Problem | 9 |
Magnetic Fields | 16 |
حقوق النشر | |
6 من الأقسام الأخرى غير ظاهرة
طبعات أخرى - عرض جميع المقتطفات
عبارات ومصطلحات مألوفة
approximation assume asymptotic analysis band Boltzmann equation boundary conditions boundary value problem Brillouin zone carrier densities classical computed consider constant continuity equation corresponding current density denotes density matrix depletion region derived differential equations dimensional diode doping concentration drift diffusion equations Eeff effects electric field electron ensemble given grad holds implies initial integral inversion J₁ lattice layer term linear Markowich mathematical MOSFET nonlinear number density obtain Ohmic contacts one-dimensional P-N junction p-region parameter particle Poisson equation position potential quantum Liouville equation quantum Vlasov equation recombination recombination-generation reduced problem reverse bias satisfies saturation Schrödinger equation Section semi-classical semiconductor devices simulation singular perturbation solution solved space charge stationary thermal equilibrium tion transformation U₁ unscaled V₁ variable vector velocity Vlasov equation voltage-current characteristic Wigner function x₁ zero ΘΩΝ μη