U.S. Government Printing Office, 1990 - 248 من الصفحات
This book contains the first unified account of the currently used mathematical models for charge transport in semiconductor devices. It is focussed on a presentation of a hierarchy of models ranging from kinetic quantum transport equations to the classical drift diffusion equations. Particular emphasis is given to the derivation of the models, an analysis of the solution structure, and an explanation of the most important devices. The relations between the different models and the physical assumptions needed for their respective validity are clarified. The book addresses applied mathematicians, electrical engineers and solid-state physicists. It is accessible to graduate students in each of the three fields, since mathematical details are replaced by references to the literature to a large extent. It provides a reference text for researchers in the field as well as a text for graduate courses and seminars.
ما يقوله الناس - كتابة مراجعة
لم نعثر على أي مراجعات في الأماكن المعتادة.
From Kinetic to Fluid Dynamical Models
The Drift Diffusion Equations
2 من الأقسام الأخرى غير ظاهرة
طبعات أخرى - عرض جميع المقتطفات
analysis applied approximation assume assumption asymptotic band bias Boltzmann equation boundary conditions bounded called carrier Chapter characteristic charge classical collision computed concentration consider constant continuity corresponding current density defined denotes density depends depletion region derived determined device diode discussed doping drift diffusion equations effects electric field electron energy ensemble equilibrium existence expansion field function given gives grad holds implies initial integral introduced inversion layer leads limit linear mathematical means methods Note obtain one-dimensional operator P-N junction p-region parameter particle perturbation physical position potential presented problem quantum Liouville equation quantum mechanical reads reduced refer relation respect reverse satisfies scaled semiconductor semiconductor devices simulation solution solved space steady takes tion transformation transport variable vector Vlasov equation voltage wave zero
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