The Stationary Semiconductor Device Equations

الغلاف الأمامي
Springer Science & Business Media, 12‏/12‏/1985 - 195 من الصفحات
In the last two decades semiconductor device simulation has become a research area, which thrives on a cooperation of physicists, electrical engineers and mathe maticians. In this book the static semiconductor device problem is presented and analysed from an applied mathematician's point of view. I shall derive the device equations - as obtained for the first time by Van Roosbroeck in 1950 - from physical principles, present a mathematical analysis, discuss their numerical solu tion by discretisation techniques and report on selected device simulation runs. To me personally the most fascinating aspect of mathematical device analysis is that an interplay of abstract mathematics, perturbation theory, numerical analysis and device physics is prompting the design and development of new technology. I very much hope to convey to the reader the importance of applied mathematics for technological progress. Each chapter of this book is designed to be as selfcontained as possible, however, the mathematical analysis of the device problem requires tools which cannot be presented completely here. Those readers who are not interested in the mathemati cal methodology and rigor can extract the desired information by simply ignoring details and proofs of theorems. Also, at the beginning of each chapter I refer to textbooks which introduce the interested reader to the required mathematical concepts.
 

الصفحات المحددة

المحتوى

Introduction
1
About This Book
2
Semiconductors
3
References
5
Mathematical Modeling of Semiconductor Devices
7
Poissons Equation
8
Continuity Equations
10
Current Relations
11
44 The ZeroSpaceCharge Approximation
93
45 The Layer Problems
95
46 Representation and Structure of Solutions
100
47 Extensions
109
Graded Junctions
110
Strongly Onesided Junctions
112
Fielddependent Mobilities Velocity Saturation
115
48 Scaling Revisited and Conditioning
120

Summary
13
22 Parameter Models
14
The RecombinationGeneration Rate
16
Carrier Mobility Models
18
23 Boundary Conditions and Device Geometry The Static Problem
19
The Static Problem
24
24 Dependent Variables and Scaling Transformation of State Variables
25
The Singular Perturbation Scaling
26
References
29
Analysis of the Basic Stationary Semiconductor Device Equations
31
32 Existence of Solutions
33
33 Global Regularity
41
34 Uniqueness for Small Voltages
43
35 Global Continuous Branches of Solutions
48
The ZeroRecombinationGeneration Case
49
VoltageCurrent Characteristics
52
Nonvanishing RecombinationGeneration Terms Impact Ionisation
54
36 Approximate Solutions
56
Approximation Analysis by Decoupling
57
Iteration Schemes
60
References
66
Singular Perturbation Analysis M of the Stationary Semiconductor Device Problem
68
42 A Singularly Perturbed Second Order Model Problem
72
Structure of Solutions
73
Slow and Fast Scales
76
43 Asymptotic Expansions
80
Local Coordinate Transformations
81
The Outer Expansion
83
Boundary Layer Expansions
87
A Ohmic Contacts
88
B Neumann Segments
89
D SemiconductorOxide Interfaces
90
Conditioning of the Continuity Equations
124
References
129
Discretisation of the Stationary Device Problem
131
51 Construction of Discretisations
132
Discretisation of Poissons Equation
133
C Finite Difference Schemes
137
Discretisation of the Current Relations and Continuity Equations
139
A Weak Formulations
140
B The Failure of the Standard Discretisation
141
C Finite Element ScharfetterGummel Discretisations
143
D The Finite Difference ScharfetterGummel Schemes
148
52 Solutions of Static Discretisations
149
The Coefficient Matrices
150
53 Convergence of Discretisations
151
Decoupled Convergence Analysis
152
Classical Convergence Theory
154
Convergence Analysis of the SGSchemes
158
Convergence Analysis for Poissons Equation
162
Current Density and Outflow Current Approximations
167
54 Extensions and Conclusions
169
Schottky Contacts
170
Adaptive MeshConstruction
171
References
176
Numerical Simulation A Case Study
178
References
183
Appendix
184
Mathematical Notation
185
B Scalars Vectors and Matrices
186
D Landau Symbols
187
F Functionalanalytic Notations
189
Subject Index
191
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